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Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Fihn Transistors

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【Author】 LIU Yuan;WU Wei-Jing;QIANG Lei;WANG Lei;EN Yun-Fei;LI Bin;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,China Electronic Produce Reliability and Environmental Testing Research Institute;State Key Laboratory of Luminescent Materials and Devices,South China University of Technology;School of Electronic and Information Engineering,South China University of Technology;

【机构】 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,China Electronic Produce Reliability and Environmental Testing Research Institute； State Key Laboratory of Luminescent Materials and Devices,South China University of Technology； School of Electronic and Information Engineering,South China University of Technology；

【摘要】 The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between250 K and 430 K.The experimental results show that drain currents are thermally activated following the MeyerNeldel rule,which can be explained by the multiple-trapping process.Moreover,the field effect electron mobility firstly increases,and then decreases with the increase of temperature,while the threshold voltage decreases with increasing the temperature.The activation energy and the density of localized gap states are extracted.A noticeable increase in the density of localized states is observed at the higher temperatures.更多还原

【Abstract】 The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between250 K and 430 K.The experimental results show that drain currents are thermally activated following the MeyerNeldel rule,which can be explained by the multiple-trapping process.Moreover,the field effect electron mobility firstly increases,and then decreases with the increase of temperature,while the threshold voltage decreases with increasing the temperature.The activation energy and the density of localized gap states are extracted.A noticeable increase in the density of localized states is observed at the higher temperatures.更多还原

【基金】 Supported by the National Natural Science Foundation of China under Grant Nos 61204112.61204089 and 61306099;the Guangdong Provincial Natural Science Foundation under Grant No 2014A030313656

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年08期

【分类号】TN321.5
【下载频次】13

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