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Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire

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【Author】 YAN Wei-Xia;ZHANG Ze-Fang;GUO Xiao-Hui;LIU Wei-Li;SONG Zhi-Tang;State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology;University of Chinese Academy of Sciences;

【机构】 State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology； University of Chinese Academy of Sciences；

【摘要】 Effects of abrasive concentration on material removal rate(MRR) and surface quality in the chemical mechanical polishing(CMP) of light-emitting diode sapphire substrates are investigated.Experimental results show that the MRR increases linearly with the abrasive concentration,while the rms roughness decreases with the increasing abrasive concentration.In addition,the in situ coefficient of friction(COF) is also conducted during the sapphire polishing process.The results present that COF increases sharply with the abrasive concentration up to 20 wt%and then shows a slight decrease from 20 wt%to 40 wt%.Temperature is a product of the friction force that is proportional to COF,which is an indicator for the mechanism of the sapphire CMP.更多还原

【Abstract】 Effects of abrasive concentration on material removal rate(MRR) and surface quality in the chemical mechanical polishing(CMP) of light-emitting diode sapphire substrates are investigated.Experimental results show that the MRR increases linearly with the abrasive concentration,while the rms roughness decreases with the increasing abrasive concentration.In addition,the in situ coefficient of friction(COF) is also conducted during the sapphire polishing process.The results present that COF increases sharply with the abrasive concentration up to 20 wt%and then shows a slight decrease from 20 wt%to 40 wt%.Temperature is a product of the friction force that is proportional to COF,which is an indicator for the mechanism of the sapphire CMP.更多还原

【基金】 Supported by the National Major Scientific and Technological Special Project during the Twelfth Five-year Plan Period under Grant No 2011ZX02704;the National Natural Science Foundation of China under Grant No 51205387;the Science and Technology Commission of Shanghai under Grant Nos llnm0500300 and 14XD1425300

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年08期

【分类号】TN312.8;TN305.2
【下载频次】33

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