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Characterization of Ge Doping on Sb₂Te₃ for High-Speed Phase Change Memory Application

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【Author】 ZHU Yue-Qin;ZHANG Zhong-Hua;SONG San-Nian;XIE Hua-Qing;SONG Zhi-Tang;SHEN Lan-Lan;LI Le;WU Liang-Cai;LIU Bo;School of Environmental and Materials Engineering,Shanghai Second Polytechnic University;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

【机构】 School of Environmental and Materials Engineering,Shanghai Second Polytechnic University； State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences；

【摘要】 The phase change material of Ge-doped Sb₂ Te₂ is shown to have higher crystallization temperature and better thermal stability compared with pure Sb₂ Te₂.Ge_0.11Sb₂Te₃ alloys are considered to be a potential candidate for phase change random access memories,as proved by a higher crystallization temperature,a better data retention ability,and a faster switching speed in comparison with those of Ge₂Sb₂Te₅.In addition,Ge_0.11Sb₂Te₃ presents extremely rapid reverse switching speed（10 ns）,and up to 10⁵ programming cycles are obtained with stable set and reset resistances.更多还原

【Abstract】 The phase change material of Ge-doped Sb₂ Te₂ is shown to have higher crystallization temperature and better thermal stability compared with pure Sb₂ Te₂.Ge_0.11Sb₂Te₃ alloys are considered to be a potential candidate for phase change random access memories,as proved by a higher crystallization temperature,a better data retention ability,and a faster switching speed in comparison with those of Ge₂Sb₂Te₅.In addition,Ge_0.11Sb₂Te₃ presents extremely rapid reverse switching speed（10 ns）,and up to 10⁵ programming cycles are obtained with stable set and reset resistances.更多还原

【基金】 Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020402;the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607 and2011CB932804;the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003;the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500 and 61376006;the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,12QA1403900,13ZR1447200 and 13DZ2295700

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年07期

【分类号】TP333
【下载频次】38

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Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application

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Characterization of Ge Doping on Sb₂Te₃ for High-Speed Phase Change Memory Application