The Cu Based AlGaN/GaN Schottky Barrier Diode

【摘要】 The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si substrates are compared.The onset voltage of Cu Schottky diodes is about 0.4V less than the Ni/Al contact.For the Cu/Ni Schottky contact,the leakage current is 4.7×10^-7 A/mm at-10 V.After annealing,the leakage current is decreased to3.7×10^-7 A/mm for 400℃ or 4.6×10^-8 A/mm for 500℃,respectively.The electrical property is affected by the thickness ratio of Cu to Ni.The Cu/Ni for 80/20 nm shows a low onset voltage,while the Cu/Ni for 20/80 nm shows a low leakage current.Both breakdown voltages are above 720 V.更多还原

【Abstract】 The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si substrates are compared.The onset voltage of Cu Schottky diodes is about 0.4V less than the Ni/Al contact.For the Cu/Ni Schottky contact,the leakage current is 4.7×10^-7 A/mm at-10 V.After annealing,the leakage current is decreased to3.7×10^-7 A/mm for 400℃ or 4.6×10^-8 A/mm for 500℃,respectively.The electrical property is affected by the thickness ratio of Cu to Ni.The Cu/Ni for 80/20 nm shows a low onset voltage,while the Cu/Ni for 20/80 nm shows a low leakage current.Both breakdown voltages are above 720 V.更多还原