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Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays
【摘要】 A novel slow-down set waveform is proposed to improve the set performance and a 1kb phase change random access memory chip fabricated with a 130 nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse.The amplitude difference(I1-I2) of the set pulse is proved to be a crucial parameter for set programming.We observe and analyze the cell characteristics with different I1-I2 by means of thermal simulations and high-resolution transmission electron microscopy,which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1-I2.This will lead to an amorphous residue in the active region.We also discuss the programming method to avoid the set performance degradations.
【Abstract】 A novel slow-down set waveform is proposed to improve the set performance and a 1kb phase change random access memory chip fabricated with a 130 nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse.The amplitude difference(I1-I2) of the set pulse is proved to be a crucial parameter for set programming.We observe and analyze the cell characteristics with different I1-I2 by means of thermal simulations and high-resolution transmission electron microscopy,which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1-I2.This will lead to an amorphous residue in the active region.We also discuss the programming method to avoid the set performance degradations.
- 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年06期
- 【分类号】TP333
- 【下载频次】14