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Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

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【作者】 范茜陈后鹏王倩王月青吕士龙刘燕宋志棠冯高明刘波

【Author】 FAN Xi;CHEN Hou-Peng;WANG Qian;WANG Yue-Qing;LV Shi-Long;LIU Yan;SONG Zhi-Tang;FENG Gao-Ming;LIU Bo;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;Shanghai Key Laboratory of Nanofabrication Technology for Memory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;University of Chinese Academy of Sciences;United Laboratory,Semiconductor Manufacturing International Corporation;

【机构】 State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of SciencesShanghai Key Laboratory of Nanofabrication Technology for Memory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of SciencesUniversity of Chinese Academy of SciencesUnited Laboratory,Semiconductor Manufacturing International Corporation

【摘要】 A novel slow-down set waveform is proposed to improve the set performance and a 1kb phase change random access memory chip fabricated with a 130 nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse.The amplitude difference(I1-I2) of the set pulse is proved to be a crucial parameter for set programming.We observe and analyze the cell characteristics with different I1-I2 by means of thermal simulations and high-resolution transmission electron microscopy,which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1-I2.This will lead to an amorphous residue in the active region.We also discuss the programming method to avoid the set performance degradations.

【Abstract】 A novel slow-down set waveform is proposed to improve the set performance and a 1kb phase change random access memory chip fabricated with a 130 nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse.The amplitude difference(I1-I2) of the set pulse is proved to be a crucial parameter for set programming.We observe and analyze the cell characteristics with different I1-I2 by means of thermal simulations and high-resolution transmission electron microscopy,which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1-I2.This will lead to an amorphous residue in the active region.We also discuss the programming method to avoid the set performance degradations.

【基金】 Supported by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA09020402;the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607,and 2011CB932804;the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003;the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500,and 61376006;the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,13DZ2295700,12QA1403900,and 13ZR1447200
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年06期
  • 【分类号】TP333
  • 【下载频次】14
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