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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

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【作者】 崔磊王权王晓亮肖红领王翠梅姜丽娟冯春殷海波巩稼民李百泉王占国

【Author】 CUI Lei;WANG Quan;WANG Xiao-Liang;XIAO Hong-Ling;WANG Cui-Mei;JIANG Li-Juan;FENG Chun;YIN Hai-Bo;GONG Jia-Min;LI Bai-Quan;WANG Zhan-Guo;Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;School of Electronic Engineering,Xi’an University of Posts and Telecommunications;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;Beijing Huajin Chuangwei Technology Co.,Ltd.;

【机构】 Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of SciencesSchool of Electronic Engineering,Xi’an University of Posts and TelecommunicationsBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing Huajin Chuangwei Technology Co.,Ltd.

【摘要】 A novel multi-finger gate high electron mobility transistor(HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state.The effective gate length(Leff) of the multi-Snger gate device is smaller than that of the field plate gate device.In this work,Seld plate gate,Sve-Gnger gate and ten-finger gate devices axe simulated.The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate Seld plate.Moreover,this value would be further reduced when the number of gate fingers is increased.In addition,it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate.

【Abstract】 A novel multi-finger gate high electron mobility transistor(HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state.The effective gate length(Leff) of the multi-Snger gate device is smaller than that of the field plate gate device.In this work,Seld plate gate,Sve-Gnger gate and ten-finger gate devices axe simulated.The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate Seld plate.Moreover,this value would be further reduced when the number of gate fingers is increased.In addition,it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate.

【基金】 Supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences under Grant No YYY-0701-02;the National Nature Science Foundation of China under Grant Nos 61106014,61204017 and 61334002;the State Key Development Program for Basic Research of China under Grant No 2010CB327503;the National Science and Technology Major Project of China
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年05期
  • 【分类号】TN386
  • 【下载频次】31
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