【摘要】 采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上成功制备了不同摩尔分数La掺杂BaTi2O5薄膜。研究了不同La掺量的BaTi2O5(Ba1-xLaxTi2O5)薄膜的物相组成、介电性能和铁电性能。XRD分析结果表明,采用溶胶-凝胶法经过850℃退火制备的Ba1-xLaxTi2O5(0≤x≤0.01)薄膜样品结晶较好,无杂相出现。La掺杂提高了薄膜的介电性能和铁电性能,当掺杂量0.004≤x≤0.008,测试频率为1MHz时,薄膜的介电常数约为630;当x=0.004时,掺La的BaTi2O5薄膜的剩余极化值最大,2Pr=2.1μC/cm2。更多还原

【Abstract】 La doped BaTi2O5 thin films were prepared by a sol-gel method on Pt/Ti/SiO2/Si substrstes.The effect of the La content on electrical properties of La doped BaTi2O5(Ba1-xLaxTi2O5)thin films was investigated.The singlephase Ba1-xLaxTi2O5(0≤x≤0.01)thin films were obtained at 850 ℃.The dielectric and ferroelectric properties were improved due to the doping of La,the Ba1-xLaxTi2O5 thin films with 0.004≤x≤0.008 had the maximum dielectric constant of 630 at 1MHz,and the Ba1-xLaxTi2O5 thin films with x=0.004 had the maximum remnant polarization(2Pr)of2.1μC/cm2.更多还原