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太赫兹真空电子器件用场发射阴极技术分析
Analysis of Field Emission Cathodes for Terahertz Vacuum Electronic Devices
【摘要】 本文阐述了太赫兹真空电子器件对阴极电子源的需求条件,分析了在该器件中应用场发射阴极的可能性。介绍了当前两种主要场发射阴极,即金属薄膜场发射阴极和碳纳米管场发射阴极的国内外发展情况,指出了它们各自的优势以及实际应用中存在的障碍,并提出了相应的解决途径。试验和分析结果表明,场发射阴极具有很好的太赫兹真空电子器件应用前景。
【Abstract】 The requirement of Terahertz(THz) vacuum electronic devices for electron resources is presented in this paper. The analysis shows that field emission cathodes are suitable for THz vacuum electronic devices. The development and the strength of two main field emission cathodes, metal thin film field emission cathode and carbon nanotube cathode are introduced. The obstacles of the cathodes for THz applications are also pointed out and corresponding solutions are suggested. The experiments and the analysis indicate the field emission cathodes a good prospect in THz vacuum electronic devices.
【Key words】 terahertz; vacuum electronic device; field emission cathode; metal thin film field emission cathode; carbon nanotube;
- 【文献出处】 微波学报 ,Journal of Microwaves , 编辑部邮箱 ,2015年S1期
- 【分类号】TN103
- 【被引频次】4
- 【下载频次】176