【摘要】 采用无电化学刻蚀技术,通过优化Ag NO₃浓度、刻蚀温度和刻蚀时间,研究在125 mm×125 mm多晶硅片表面制备均匀分布硅纳米线阵列的方法,获得了硅纳米线织构的多晶硅在宽光谱范围内（300¹000 nm）平均反射率约为8%。成功制备了表面具有硅纳米线织构的多晶硅太阳电池,并通过两种改进方法提高太阳电池效率:1)优化硅纳米线阵列的长度（约1.5μm）,并利用PECVD方法在硅纳米线阵列表面生长70 nm Si₃N₄薄膜进行表面钝化,纳米线织构的多晶硅太阳电池效率从8.95%提高到了11.41%。2)使用HNO₃和HF混合溶液去除硅衬底背表面的硅纳米线阵列,使铝背电极与多晶硅紧密接触,太阳电池效率进一步提高到13.99%。研究表明:所采用的改进方法能有效提高纳米线织构多晶硅太阳电池的效率。更多还原

【Abstract】 In this paper,electroless chemical etching method is used to prepare uniformly Si nanowire arrays（Si NWs）in 125 mm×125 mm polycrystalline Si wafer,through optimizing the concentration of Ag NO₃,etching temperature andetching time. The reflection of the Si NWs is about 8 % in the spectrum ranging from 300 nm to 1000 nm. We fabricatedsuccessfully the Si NWs textured polycrystalline Si solar cell and increases the efficiency by using two improved methods:1)optimizing the length of Si NWs（1.5 μm）,and growing 70 nm Si₃N₄ on the surface of Si NWs with PECVD,theefficiency increases from 8.95% to 11.41%. 2)Removing the Si NWs on the back surface of wafer with HNO₃ and HFmixed solution to obtain closely contact between Al electrode and wafer,the efficiency enhances further to 13.99%. Theresults demonstrated that the improved methods can increase the efficiency of Si NWs textured polycrystalline Si solar celleffectively.更多还原