【摘要】 在GaAs单晶衬底上用分子束外延技术,采用相同工艺生长了非掺杂及掺Te的GaSb薄膜.以原子力显微镜、X射线衍射谱和正电子湮没谱技术对比分析了样品的结构及缺陷.研究表明,样品在掺Te后在界面处缺陷减少,外延生长较好.并分析其缺陷的产生机理.更多还原

【Abstract】 This paper presents the results of X-ray diffraction spectra(XRD),atomic force microscopy(AFM)and positron annihilation Doppler broadening spectroscopy(PADB)measurements on the undoped and Te-doped GaSb grown on the GaAs substrate by molecular beam epitaxy(MBE)under the same conditions.The structures and defect properties in the above nano-materials have been described.The study shows that the defects of film doped with Te decrease.This result will be helpful to the epitaxial growth.Finally,the mechanism of defects is analyzed.更多还原