【摘要】 针对CdSiP₂晶体生长过程中,晶体表面与石英坩埚内壁严重粘连甚至开裂的问题,研究了柔性氮化硼（PBN）内衬坩埚生长CdSiP₂晶体的新工艺。运用X射线能量色散谱仪（EDS）和X射线光电子能谱仪（XPS）分别对两种坩埚材料生长的CdSiP₂晶体表面元素成分和化学状态进行测试发现,采用石英坩埚生长的CdSiP₂晶体表面主要组分元素为33.31%的Si和65.63%的O,晶体表面Si2p的结合能为103.2 e V,与文献中SiO₂的Si2p结合能一致。进一步的分析表明,高温CdSiP₂熔体离解产物与石英材料反应生成SiO₂界面层是导致晶体严重粘连,甚至开裂成碎块的重要原因;采用柔性氮化硼（PBN）内衬坩埚能有效解决晶体与器壁的粘连,生长的CdSiP₂晶体完整较好,表面层各组分元素含量接近CdSiP₂理论化学配比1∶1∶2,质量较高。更多还原

【Abstract】 In order to overcome the problems of heavily adhesion ofas grown crystalsand quartz crucible and crystal cracking during the process of CdSiP₂ crystal growth,a new technologyi. e.,crystal grows in a PBN liningcrucible,was investigated. The constituents and chemical state of the surface of the grown CdSiP₂ crystals were characterized by energy dispersive spectrometer（ EDS） and X-ray photoelectron spectroscopy（ XPS）. It is found that the main elements on surface of CdSiP₂ crystal grown by quartz crucible are 33. 31% of Si and 65. 63% of O. The binding energy of Si2p is 103. 2 e V,in consistent withthe reported Si2p binding energy of SiO₂. Further studies indicate that the reaction ofdissociation products of high temperature CdSiP₂ melt and quartz material is the key reason of serious adhesion between as grown crystals and quartz crucible and crystal cracking. Simultaneously,PBN crucible can effectively prevent the adhesion phenomenon and reduce the internal thermal stress of the as grown crystal. Simultaneously,the surface of the crystal grown by this method is crack free and the component contents are close to stoichiometry.更多还原