【摘要】 以SF6和O2为反应气体,采用反应离子刻蚀(RIE)技术,在单晶硅衬底表面制备了锥型绒面结构,系统地研究了关键刻蚀条件对RIE晶硅表面制绒的影响。结果表明,随着反应气压增大,晶体硅表面锥型结构呈现分布均匀和高度增加的趋势,但过高气压下锥型微结构向脊型转变直至消失。在反应气体中掺入CH4,晶体硅表面锥型结构高度增加,表面平均反射率下降到5.63%。该结果可解释为:气压增大导致的F原子刻蚀的增强有利于锥体结构高度增加,小尺寸的Si OyFx聚合物掩模的完全刻蚀使锥型结构的尺寸逐渐均匀,而过高的气压下,掩模及晶体硅的过量刻蚀导致微结构只剩锥体底部的脊型凸起。CH4掺入导致CHx聚合物的掩模和粒子轰击效应均有增强,更有利于高纵横比锥型微结构的形成。更多还原

【Abstract】 Cone structure textures for c-Si solar cells were achieved through reactive ion etching( RIE)texturing process using SF6 and O2as etch gases. The effects of the major parameters on the RIE texturing of silicon surface was analyzed. The results indicate that the distribution uniformity and the depth of the cone structures for c-Si increases as the working pressure increasing,and a ridge structure is developed ultimately. When CH4 is incorporated to reactant gas,the cone structures become higher and the average surface reflectivity dropped to 5. 63%. All results can be explained as follows: the enhancement of F atom etching effect with pressure increasing is helpful for the increase of cone structure depth. The completely etching-off of the small polymer Si OyFxmake the size distribution of cone structure become more uniform. Yet,the excess etching of the mask and silicon substrate at the higher pressure result in silicon surface only left the bottom of the cone seen like the ridge convex. The incorporation of CH4 gives rise to the enhancement of the CHxpolymer formation and ion bombardment,which is advantageous to the formation of the cone microstructures with a high aspect ratio.更多还原