【摘要】 研究了100 mm Ga As赝配高电子迁移率晶体管(PHEMT)外延材料量产的稳定性控制。通过选择控制参数和控制周期,提高了外延材料性能的重复性和稳定性。12个样品方阻的标准差为0.53%,全部偏差1.66%。通过优化生长工艺有效的降低了样品表面颗粒,样品表面颗粒数量减小到612/片,这些参数均达到或超过国外主流外延厂商水平。更多还原

【Abstract】 The stability control for mass production of 100 mm Ga As pseudomorphic high electron mobility transistor( PHEMT) epitaxial by solid source molecular beam epitaxy( MBE) production system. Control parameter and control period were developed so as to improve reproducibility and stability. Standard deviation of 12 wafers sheet resistance is 0. 53%,total deviation is 1. 66%. Surface particles were decreased efficiently by optimizing growth process,total particle number of the whole wafer is 612 / PCS.The sheet resistance and particle results are better than most epitaxy company.更多还原