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顶部籽晶法生长Li掺杂非线性光学晶体SrB4O7

Growth of Li Doped Nonlinear Optical Crystal SrB4O7 by Top Seed Crystal Method

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【作者】 焦志伟李京洋沈光球

【Author】 JIAO Zhi-wei;LI Jing-yang;SHEN Guang-qiu;College of Mechanical and Electrical Engineering,North China University of Technology;Department of Chemistry,Tsinghua University;

【机构】 北方工业大学机电学院清华大学化学系

【摘要】 通过顶部籽晶法获得了大块Li掺杂的Sr B4O7(Li∶SBO)单晶,晶体尺寸为80 mm×11 mm×40 mm。元素分析和X射线衍射结果证明锂离子成功掺入SBO晶格中,并使掺入后的SBO晶胞有所增大。深紫外和紫外透过光谱显示Li掺杂后的SBO晶体紫外截止边相对于SBO的120 nm红移到了140 nm左右,倍频结果显示Li∶SBO晶体可实现较强的1064 nm的倍频光输出。晶体的缺陷研究结果显示,Li∶SBO晶体生长时容易在c轴方向上形成线状包裹体,腐蚀后的晶体表面发现了两种不同形貌的位错蚀坑,对应于晶体内部不同的位错形态。

【Abstract】 Big Li doped SrB4O7( Li∶ SBO) single crystal with size up to 80 mm × 11 mm × 40 mm was grown by the top-seeded solution growth( TSSG) method. The results of elemental analysis and X-ray diffraction indicate that the Li+have been doped into the crystal lattice successfully,which makes the lattice volume of SBO become a little larger. The transmittance of the as-grown crystal in the DUV-UV range indicates that the UV absorption edge of the crystal shifts to 140 nm compared to the 120 nm of pure SrB4O7 crystal. Second-harmonic generation( SHG) test show that Li ∶ SBO could be phasematchable for the 1064 nm laser. Some defects of the crystal were studied and it was found that wire-like inclusions were apt to form along c-axis. Two kinds of etching pits corresponding to the different dislocation configuration were also detected on the crystal.

【关键词】 SrB4O7顶部籽晶法倍频效应晶体缺陷
【Key words】 SrB4O7TSSGsecond harmonic generationcrystal defect
  • 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2015年02期
  • 【分类号】O78
  • 【被引频次】2
  • 【下载频次】129
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