【摘要】 研究了在大功率工作条件下的Ga N HFET器件的自加热效应。当Ga N HFET器件工作在大功率条件下时所产生的自加热效应,将会使得器件的有源沟道层的温度升高,影响到器件的工作特性。首先分析了多栅指结构的Ga N HFET器件在一定功耗条件下的的温度分布情况,然后在此基础之上,对Ga N HFET做了相应的优化,使得器件的温度有一定程度的降低。更多还原

【Abstract】 This paper investigated the self-heating effect Ga N HFET devices at high power operating conditions. The self-heating effect produced by Ga N HFET device operating at high power conditions will make the temperature of the active channel layer increases, and affecting the operating characteristics of the device. This paper, firstly, analyzes the temperature distribution of the multi-finger Ga N HFET device structure under certain conditions, and on this basis, made the corresponding optimized so that the temperature of the device has a certain degree of reduction.更多还原