【摘要】 以LaNiO3做缓冲层,用射频磁控溅射法在SiO2/Si(100)衬底上制备出0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3铁电薄膜.采用两步法在峰值温度750℃对薄膜进行退火.分析了薄膜的漏电流机制,研究表明,薄膜漏电流在低场强下(<32kV/cm)符合欧姆(热电子发射)导电机制并受到晶界限制行为的影响,在中场强下(32~85kV/cm)空间电荷限制电流(SCLC)机制占据优势,在高场强下(85~100kV/cm)富勒-诺丁海姆(FN)隧穿机制起主导作用.更多还原

【Abstract】 The 0. 9Pb( Sc0. 5Ta0. 5) O3- 0. 1Pb Ti O3 ferroelectric thin films were prepared on Si O2/ Si( 100)substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer,and the films were subsequently annealed by a two- step rapid thermal annealing approach. The mechanism of leakage current of the films was analyzed. Ohm conduction and a grain boundary limit behavior are responsible for the leakage behavior of the films in a low electric field region,respectively,a space charge limit conduction dominated in a medium electric field region,while an interface- limited Fowler- Nordheim tunneling is involved in their leakage behavior in a high electric field region.更多还原