【摘要】 为了研究电子辐照导致CCD参数退化的损伤机理,以及CCD内不同沟道宽长比的NMOSFET的辐射效应,将与CCD同时流片的两种不同沟道宽长比的深亚微米NMOSFET进行电子辐照实验。分析了电子辐照导致NMOSFET阈值电压和饱和电流退化的情况,以及器件的辐射损伤敏感性。实验结果表明,电子辐照导致两种NMOSFET器件的参数退化情况以及辐射损伤敏感性类似。导致器件参数退化的主要原因是界面陷阱电荷,同时氧化物陷阱电荷表现出了一定的竞争关系。实验结果为研究CCD电子辐照导致的辐射效应提供了基础数据支持。更多还原

【Abstract】 Two kinds of deep submicron NMOSFET with different channel width-length ratio and companied by the CCD in the same process were irradiated by electron to investigate the damage mechanism and total ionizing dose effect of CCD and NMOSFET induced by electron.The degradation of threshold voltage and saturation current of NMOSFET irradiated by electron was analyzed,also the sensitivity of NMOSFET to irradiation was analyzed.The experimental results represented that the parameter’s degradation and sensitivity to electron irradiation of the two kinds of NMOSFET were similar to each other.The primary cause of parameter’s degradation induced by electron irradiation was that the charges had been trapped by interface defects,meanwhile,the charges trapped by defects in oxide had shown certain competitiveness.The research results would provide fundamental data for radiation effect of CCD irradiated by electron.更多还原