【摘要】 设计了具有高量子效率的发光二极管(LED)芯片。LED的辐射复合速率对于器件的电子泄露,发光功率,在大电流下的效率下降等问题具有重要的影响。通过优化器件结构,新设计的芯片在大电流注入下,发光功率是传统结构的两倍。更多还原

【Abstract】 The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers were studied.It was found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs)when the InGaN/GaN multilayer barriers are used.更多还原