【摘要】 3D蒙特卡罗器件模拟计算量大,计算量随网格与粒子数增加而急剧增加。通过分析3D蒙卡模拟加速热点和进一步可并行性,研究有效电势方法的集成众核并行方案;研究粒子自由飞行、统计模拟信息、计算表面粗糙散射等热点并行方案,最终实现基于CPU/MIC的三级并行3D蒙特卡罗器件模拟软件。实验结果显示,三级并行比单级并行获得更好的性能;当提高模拟精度时,相比单级并行,三级并行蒙特卡罗模拟加速比增加。更多还原

【Abstract】 3D Monte Carlo simulation for semiconductor devices consumes long time.Especially when grids are growing and particles are increasing,the computing scale becomes very large.By analyzing the hotspots and the second level parallelism,the parallel scheme of the Effective Potential Method on Many Integrated Core is presented;Parallel schemes of particle free fighting,simulation information statistics and surface roughness scattering computation are researched.A 3-level parallel 3D Monte Carlo simulator for semiconductor devices is implemented and validated.Results show that the 3-level parallel program can get a better performance than the original single level parallel version.When the simulation accuracy is improved,the 3-level parallel program can get a greater speed-up ratio.更多还原