【摘要】 利用直流电弧放电合成非晶碳氧化硅(SiCO)纳米线,不使用催化剂和模板,独立的SiCO纳米线沉积在石墨锅的表面.通过XRD、SEM、TEM、XPS、FTIR等对SiCO纳米线进行了表征.结果表明,纳米线长度为20~100μm,直径为10~100 nm,Si原子同C原子和氧原子分享成键组成SiCO单元.SiCO纳米线的光致发光谱在454和540 nm呈现了强而稳定的白色发光峰.SiCO纳米线的生长机制为等离子辅助气-固生长机制.更多还原

【Abstract】 Synthesis of amorphous SiCO nanowires was carried out by means of direct current arc discharge.Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template.The SiCO nanowires were analyzed by XRD,SEM,TEM.XPS,and FTIR.The SiCO nanowires were typically 20-100 urn in length and 10-100 nm in diameter as measured by SEM and TEM.The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units.The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm.A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.更多还原