【摘要】 基于电子密度泛函理论计算,系统研究了氧空位对V-C（p型）、Cr-N（n型）、V-N和Cr-C（电中性）四种共掺型锐钛矿TiO₂的几何和电子结构的影响.结果表明在最稳定构型中氧空位处在与金属杂质原子相连的位置.由于氧空位的出现,共掺TiO₂禁带中一些未占据的杂质态被填充满电子,掺杂体系的导带带边位置几乎不变,这有利于减少光生载流子复合,且不影响光解水过程中的产氢反应,在厌氧条件下很容易在V-N共掺TiO₂中引入氧空位.更多还原

【Abstract】 Doping with various impurities is an effective approach to improve the photoelectrochemical properties of TiO₂.Here,we explore the effect of oxygen vacancy on geometric and electronic properties of compensated（i.e.V-N and Cr-C） and non-compensated（i.e.V-C and Cr-N） codoped anatase TiO₂ by performing extensive density functional theory calculations.Theoretical results show that oxygen vacancy prefers to the neighboring site of metal dopant（i.e.V or Cr atom）.After introduction of oxygen vacancy,the unoccupied impurity bands located within band gap of these codoped TiO₂ will be filled with electrons,and the position of conduction band offset does not change obviously,which result in the reduction of photoinduced carrier recombination and the good performance for hydrogen production via water splitting.Moreover,we find that oxygen vacancy is easily introduced in V-N codoped TiO₂ under O-poor condition.These theoretical insights are helpful for designing codoped TiO₂ with high photoelectrochemical performance.更多还原