【摘要】 针对桥区形状为尖角形的半导体桥在尖角处电流密度过于集中、易发生静电损伤的问题,提出将半导体桥的尖角部分设计为圆弧的形状,达到提高半导体桥抗静电能力的目的。静电实验发现圆弧型半导体桥在10000pF电容、25kV电压并且串联5000Ω电阻的静电冲击条件下完好无损。33μF电容、19V电压放电模式下,静电冲击前后圆弧型半导体桥的发火时间基本没变,而尖角型半导体桥的发火时间发生了较长的延迟,证明圆弧型半导体桥在保证发火的前提下抗静电能力得到增强。更多还原

【Abstract】 An arc-shaped semiconductor bridge has been designed, in order to solve the problem that cusp-shaped one is prone to electrostatic damage due to the concentrated current density at the cusp region. The result of the electrostatic shock experiment showed that the arc-shaped semiconductor bridge was intact after electrostatic shock under the condition of 10 000pF, 25kV and 5 000Ω. Meanwhile, the ignition time of the arc-shaped was not changed compared to that of the cusp-shaped, which has obvious delay under the condition of 33μF and 19V, and it proves that the antistatic ability of arc-shaped is enhanced without sacrificing the ignition capability.更多还原