【摘要】 本文设计的RTD结构,采用目前最新的发射极渐变In含量(GE)结构和集电区隔离层与势垒层之间的高In过渡层(HITL)结构,同时对发射区和集电区进行重掺杂。发射极设计面积为1μm2至几μm2的情况下,通过基于非平衡格林函数法的量子输运模拟器WinGreen模拟,将势阱厚度从4.5nm降低到4nm,峰值电流密度JP从13mA/μm2达到43mA/μm2,输出功率从235μW达到2.625mW。阵列型RTO可实现功率合成,使RTO的功率再增加一个数量级,达到毫瓦甚至几十毫瓦。同时建立包含各种寄生参数的等效电路模型,通过PSPICE工具仿真,得到振荡频率可达1.78THz的仿真结果。更多还原

【Abstract】 A graded emitter,thin barriers,heavily doped emitter and collector and high indium composition transit layers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reduction of the transit time in the collector depletion region and the resonant tunneling time,respectively.With quantum-well thickness decreasing from 4.5nm to 4nm,high peak current density JPincreases from 13 mA/μm2 to 43 mA/μm2,and the output power increases from 235μW to 2.625 mW based on by Non-equilibrium Greens function(NEGF).The ratio of RTO with rectangle wave-antennas could be focused to enhance the power to several mW.The equivalent circuit with all parasitic elements was taken into account for the RTD.Through simulating by PSPICE,it was shown that the RTD oscillator was able to oscillate up to 1.78 THz.更多还原