【摘要】 采用磁控溅射预制In薄膜和硫化热处理工艺制备了性能优良的β-In2S3薄膜。应用XRD、拉曼光谱仪及UV-Vis测试仪对薄膜的品质进行了分析,并测试了薄膜的光学与电学性能。结果表明,溅射功率和硫化热处理温度是影响薄膜品质的主要因素,比较合适的溅射功率为100~140 W,硫化热处理温度为450℃,过高的热处理温度容易在薄膜中形成缺陷,在薄膜生长过程中容易产生In5S4杂相,相比之下,溅射气体压强对薄膜品质的影响较小,溅射气体压强可选择在0.4~0.6Pa。光学与电学性能测试结果指出,得到的β-In2S3薄膜具有良好的光谱透过率,属n型半导体,可用于太阳能电池缓冲层。更多还原

【Abstract】 Theβ-In2S3 thin films with excellent properties were prepared by magnetron sputtering In films and sulfurizing heat treatment process.Qualities of thin films were analyzed by used XRD,Raman spectroscopy and UV-Vis spectroscopy;The results demonstrate that sputtering power have great influence on the crystallization properties of thin film,the optimization sputtering power was 100-140 W.In addition,heat treatment temperature has also great influence on the quality of the thin film,more appropriate heat treatment temperature was450 ℃.The higher heat treatment temperature is easy to cause defects and produce In5S4 impurity phase in the film.In contrast,the sputtering gas pressure effect on the film quality is small,the sputtering gas pressure can be selected in the 0.4-0.6Pa.Optical and electrical performance test results show that obtaining theβ-In2S3 thin films have better quality and high spectral transmittance,which belongs to n type semiconductor,can be used buffer layer for solar cells.更多还原