【摘要】 基于标准CMOS工艺的n+源/漏区和p-sub,设计了一种楔形n+pn+结构的硅基发光二极管(Si-LED)阵列,并经UMC 0.18μm 1P6M CMOS工艺制备。测试结果表明,设计的Si-LED在0.9~1.5V范围内正常工作,与CMOS电路的电源电压兼容,其发光峰值波长在1 100nm附近;注入电流为390mA时,器件的发光功率可达1 800nW,平均功率转换效率为3.5×10-6。由于工作电压低、发光功率高,设计的LED器件有望在光互连领域得到广泛应用。更多还原

【Abstract】 Optical interconnection has been studied to replace electronic interconnection because of its significant performance advantages,such as high speed and low crosstalk.Silicon based light emitting device(Si-LED)with low operating voltage and high conversion efficiency is the key to realizing optical interconnection.Based on the n+source/drain region of standard CMOS technology,this work designs and fabricates an Si-LED array with wedge-shaped n+pn+configuration in the commercial standard 0.18μm1P6MCMOS process offered by United Microelectronic Corporation(UMC)without any modification.The measurement results indicate that the designed Si-LED can operate properly between 0.9Vand1.5V,which is compatible with the power supply of CMOS integrated circuits.When the device is forward-biased,the light emitting spectrum of the Si-LED has a peak at about 1100 nm.An optical power of1 800 nW is obtained at a forward current of 390 mA,and the power conversion efficiency is 3.5×10-6.Due to the features of low operating voltage and high optical power,our Si-LED can be monolithically integrated with the CMOS circuits,and has a potential application in the field of optical interconnections.更多还原