【摘要】 基于常温反应磁控溅射和热处理工艺,在硅片(100)衬底上,制备出了具有相变特性的二氧化钒(VO2)薄膜,采用XRD、SEM对薄膜的物相结构、表面形貌进行了表征。热处理后,薄膜晶粒开始生长,在2θ=27.9°、37.1°、42.3°分别出现了VO2的(011)、(200)、(210)衍射峰,薄膜形貌均匀致密。对薄膜的方块电阻进行了变温测试,相变前后薄膜电阻突变量达三个数量级,具有很好的半导体-金属相变特性。文中还对VO2薄膜在伪装领域的应用前景进行了分析。更多还原

【Abstract】 Vanadium dioxide(VO2) films with the phase changing characteristic are prepared on the siliconsubstrate(100) by the reactive magnetron sputtering at room temperature and heat treatment process. XRD andSEM are used to characterize the phase structure and surface morphology of the thin films. After heat treatment,film grain began to grow, and at the 2θ=27.9°、37.1°、42.3°, the(011),(200),(210) diffraction peak values of VO2 arepresented respectively. The morphology of film is compact and uniform. The square resistance of variable tempera-ture testing is analyzed, and after the phase changing, the film resistance mutation is up to 3 orders of magnitude.And the application prospect of VO2 film in the field of camouflage is also analyzed.更多还原