【摘要】 主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和小芯片间隙的出光,使得高压LED的发光效率优于传统大功率LED。结果显示,在相同的1 W输入功率下,高压LED的发光效率比传统大功率LED高大约4.5%。更多还原

【Abstract】 The reasons of the luminous efficiency of In Ga N-based high-voltage light-emitting diode(HV-LED)better than that of traditional high power(THP) LED are researched and analyzed from three different aspects. Theexperimental sample with same chip size, material and package structure is adopted to ensure the reliability of ex-periment conclusions. Experiments show that the luminous efficiency of HV-LED is better than that of THP LED foruniformer current distribution and the light from the microchip gap. The results show that the luminous efficiency ofHV-LED is approximately 4.5% higher than that of THP-LED under 1 W input power.更多还原