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C掺杂ZnO稀磁半导体的磁特性研究
Study on the magnetic properties of C-doped ZnO
【摘要】 利用基于密度泛函理论(DFT)的第一性原理计算方法,研究C掺杂ZnO稀磁半导体的磁性质.发现ZnO∶C体系的磁性来源于C-p和Zn-d轨道之间的杂化,铁磁性产生的机制是以巡游电子为媒介的铁磁交换作用.富O环境下制备ZnO∶C样品能够更好地在室温下得到稳定的铁磁有序.
【Abstract】 The magnetism of C- doped ZnO has been investigated by the first- principles calculations based on density functional theory( DFT). It is found the magnetism of C- doped ZnO is derived from the hybridization between the C- p and Zn- d orbit,and the electron mediated mechanism is proposed for the ferromagnetism in the C- doped ZnO. The sample should be fabricated under O- rich condition to have a ferromagnetic ordering.
【关键词】 氧化锌;
稀磁半导体;
第一性原理;
磁特性;
【Key words】 ZnO; diluted magnetic semiconductor; first-principles; magnetic character;
【Key words】 ZnO; diluted magnetic semiconductor; first-principles; magnetic character;
【基金】 福建省教育厅科研资助项目(JA13038);福州大学科研启动基金资助项目(XRC-1282)
- 【文献出处】 福州大学学报(自然科学版) ,Journal of Fuzhou University(Natural Science Edition) , 编辑部邮箱 ,2015年06期
- 【分类号】TN304.21
- 【被引频次】2
- 【下载频次】105