【摘要】 采用原子层沉积工艺(ALD)生长均匀致密的三氧化二铝(Al2O3)薄层对氮化硅(Si Nx)绝缘层进行修饰,研究了铟镓锌氧薄膜晶体管(IGZO-TFTs)器件的性能。当Al2O3修饰层厚度为4 nm时,绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%,器件性能得到显著改善。场效应迁移率由1.19 cm2/(V·s)提高到7.11 cm2/(V·s),阈值电压由39.70 V降低到25.37 V,1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V。更多还原

【Abstract】 Top-contact thin-film transistors( TFTs) were fabricated using Si Nxas the gate insulator and In Ga Zn O as the channel layer. The insulator was modified by Al2O3 layer and its effect on the performance of IGZO-TFTs was investagated. The results show that TFTs with 4-nm-thick Al2O3 film exhibits the best electrical performance. The best performance can be attributed to the suppression of maximum density of surface states at the channel-insulator interface which is reduced by 17. 2%contrasting to the TFTs without Al2O3 buffer layers. The field effect mobility increases from 1. 19 to7. 11 cm2/( V·s),and the threshold voltage decreases from 39. 70 to 25. 37 V. Under bias stress for 1 h,the threshold voltage shift decreases from 2. 19 to 1. 41 V / dec.更多还原