Rapid thermal annealing(RTA) process of high heating rate can be up to the crystallization temperature of PZT thin films in a very short period of time(1 min), so RTA can reduce the volatilization loss during the heating process of lead oxide, and reduce the diffusion transition layer of Ti atoms. However, because of the short heat treatment time, it is too hard to control orientation and residual stress of films. By using the subsection annealing process to control the crystal orientation of the thin film,...
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