【摘要】 在ITO衬底上电沉积了Co掺杂ZnO系列样品,并用X射线粉末衍射仪和扫描电子显微镜测试了样品的结构和表面形貌.结果表明Co掺杂并没有改变ZnO的六方纤锌矿结构,而只在一定程度上改变了表面形貌.样品的场发射特性测试结果显示,随着Co掺杂浓度的增大,开启场强逐渐增大,进而可以判断ZnO体系的带隙依次变窄.Co掺杂引起ZnO能带结构的变化可归因于掺杂元素引入的d电子与基体材料导带和价带中的s、p电子之间的强的sp-d交换相互作用,这将为ZnO的带隙调控提供一种新的思路.更多还原

【Abstract】 Co-doped ZnO were electrodeposited on the ITO substrates.The structure and surface morphology of the samples was analyzed by X-ray diffraction and scanning electron microscope.The field-emission characteristics of the prepared Co-doped ZnO were also examined.The results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant,which is concerned with the band gap changing of the ZnO doping system.The band gap changing could be attributed to the strong sp-dexchange interactions between the band s,pelectrons and the localized delectrons of the doping element;this will provide a new idea about the band gap control of ZnO system.更多还原