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氮气气氛下热处理对ITO薄膜光电性能的影响
Optical and Electrical Properties of ITO Thin films Heated in Nitrogen Atmosphere
【摘要】 利用溶胶-凝胶法在玻璃衬底上制备了掺锡氧化铟(ITO)导电薄膜,并在氮气气氛下对薄膜进行热处理。采用四探针测试仪、双光束紫外-可见分光光度计、X-射线粉末衍射仪和扫描探针显微镜等手段对所制备的ITO薄膜进行分析表征,并对掺Sn量、退火温度和退火时间对薄膜光电性能的影响进行了研究。实验结果表明:当掺Sn量为11%、热处理温度为480℃、热处理时间为60min时,能在氮气气氛中成功制备纳米ITO导电薄膜,其晶粒大小在20~90nm之间,薄膜的方阻较小为390Ω/□,可见光透过率达80%以上。
【Abstract】 ITO thin films were prepared on glass substrate by the sol-gel and heated in nitrogen atmosphere.The effects of Sn dopant,contentheat-treatment temperature and time on the optical and electrical properties of ITO thin films were investigated by four-probe electrical measurement, UV-Vis spectra,XRD and AFM.The results indicate that the best processing conditions is Sn dopant content being 11%,heat-treatment temperature being 480℃,heat-treatment time being 60 min in nitrogen atmosphere.Under this condition preparing ITO,the grain size is between 20-90 nm,the sheet resistance is about 390 Ω/ □ and the average visible transmittance is over 80%.
【Key words】 ITO thin film; sol-gel process; nitrogen atmosphere; optical and electrical properties;
- 【文献出处】 信息记录材料 ,Information Recording Materials , 编辑部邮箱 ,2015年02期
- 【分类号】TN304;TB383.2
- 【下载频次】135