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The influence of Fe doping on the surface topography of GaN epitaxial material

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【作者】崔磊；殷海波；姜丽娟；王权；冯春；肖红领；王翠梅；巩稼民；张波；李百泉；王晓亮；王占国；

【Author】 Cui Lei;Yin Haibo;Jiang Lijuan;Wang Quan;Feng Chun;Xiao Hongling;Wang Cuimei;Gong Jiamin;Zhang Bo;Li Baiquan;Wang Xiaoliang;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;School of Electronic Engineering,Xi’an University of Posts & Telecommunications;Beijing Huajin Chuangwei Technology Co.,Ltd.;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;

【机构】 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences； School of Electronic Engineering,Xi’an University of Posts & Telecommunications； Beijing Huajin Chuangwei Technology Co.,Ltd.； Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices；

【摘要】 Fe doping is an effective method to obtain high resistivity Ga N epitaxial material.But in some cases,Fe doping could result in serious deterioration of the Ga N material surface topography,which will affect the electrical properties of two dimensional electron gas(2DEG) in HEMT device.In this paper,the influence of Fe doping on the surface topography of Ga N epitaxial material is studied.The results of experiments indicate that the surface topography of Fe-doped Ga N epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of Ga N materials.The Ga N material with good surface topography can be manufactured when the Fe doping concentration is 91019cm3.High resistivity Ga N epitaxial material which is 1109 cm is achieved.更多还原

【Abstract】 Fe doping is an effective method to obtain high resistivity Ga N epitaxial material.But in some cases,Fe doping could result in serious deterioration of the Ga N material surface topography,which will affect the electrical properties of two dimensional electron gas(2DEG) in HEMT device.In this paper,the influence of Fe doping on the surface topography of Ga N epitaxial material is studied.The results of experiments indicate that the surface topography of Fe-doped Ga N epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of Ga N materials.The Ga N material with good surface topography can be manufactured when the Fe doping concentration is 91019cm3.High resistivity Ga N epitaxial material which is 1109 cm is achieved.更多还原

【关键词】 Fe doping； GaN； MOCVD； surface topography；
【Key words】 Fe doping； GaN； MOCVD； surface topography；

【基金】 Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences(No.YYY-0701-02);the National Natural Science Foundation of China(Nos.61204017,61334002);the State Key Development Program for Basic Research of China;the National Science and Technology Major Project

【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2015年10期

【分类号】TN304
【被引频次】3
【下载频次】46

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