节点文献

Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 赵启凤庄奕琪包军林胡为

【Author】 Zhao Qifeng;Zhuang Yiqi;Bao Junlin;Hu Wei;School of Microelectronics, Xidian University;School of Mechano-Electronic Engineering, Xidian University;

【机构】 School of Microelectronics Xidian UniversitySchool of Mechano-Electronic Engineering Xidian University

【摘要】 Ionizing-radiation-induced current gain degradation in NPN bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A model is presented which identifies the physical mechanism responsible for current gain degradation. The increase in surface recombination velocity due to interface states results in an increase in base current. Besides, changing the surface potential along the base surface induced by the oxide-trapped charges can also lead to an increased base current. By combining the production mechanisms of oxide-trapped charges and interface states, this model can explain the fact that the current gain degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 70 krad(Si). The low dose rate was 0.1 rad(Si)/s and the high dose rate was10 rad(Si)/s. The model accords well with the experimental results.

【Abstract】 Ionizing-radiation-induced current gain degradation in NPN bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A model is presented which identifies the physical mechanism responsible for current gain degradation. The increase in surface recombination velocity due to interface states results in an increase in base current. Besides, changing the surface potential along the base surface induced by the oxide-trapped charges can also lead to an increased base current. By combining the production mechanisms of oxide-trapped charges and interface states, this model can explain the fact that the current gain degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 70 krad(Si). The low dose rate was 0.1 rad(Si)/s and the high dose rate was10 rad(Si)/s. The model accords well with the experimental results.

【基金】 Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2015年06期
  • 【分类号】TN322.8
  • 【被引频次】6
  • 【下载频次】42
节点文献中: 

本文链接的文献网络图示:

本文的引文网络