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A single channel,6-bit 410-MS/s 3bits/stage asynchronous SAR ADC based on resistive DAC

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【作者】 韩雪; 魏琦; 杨华中; 汪蕙;

【Author】 Han Xue;Wei Qi;Yang Huazhong;Wang Hui;Division of Circuits and Systems,Department of Electronic Engineering,Tsinghua University;

【机构】 Division of Circuits and Systems,Department of Electronic Engineering,Tsinghua University;

【摘要】 This paper presents a single channel,low power 6-bit 410-MS/s asynchronous successive approximation register analog-to-digital converter(SAR ADC) for ultrawide bandwidth(UWB) communication,prototyped in a SMIC 65-nm process.Based on the 3 bits/stage structure,resistive DAC,and the modified asynchronous successive approximation register control logic,the proposed ADC attains a peak spurious-free dynamic range(SFDR) of41.95 dB,and a signal-to-noise and distortion ratio(SNDR) of 28.52 dB for 370 MS/s.At the sampling rate of410 MS/s,this design still performs well with a 40.71-dB SFDR and 30.02-dB SNDR.A four-input dynamic comparator is designed so as to decrease the power consumption.The measurement results indicate that this SAR ADC consumes 2.03 mW,corresponding to a figure of merit of 189.17 fj/step at 410 MS/s.

【Abstract】 This paper presents a single channel,low power 6-bit 410-MS/s asynchronous successive approximation register analog-to-digital converter(SAR ADC) for ultrawide bandwidth(UWB) communication,prototyped in a SMIC 65-nm process.Based on the 3 bits/stage structure,resistive DAC,and the modified asynchronous successive approximation register control logic,the proposed ADC attains a peak spurious-free dynamic range(SFDR) of41.95 dB,and a signal-to-noise and distortion ratio(SNDR) of 28.52 dB for 370 MS/s.At the sampling rate of410 MS/s,this design still performs well with a 40.71-dB SFDR and 30.02-dB SNDR.A four-input dynamic comparator is designed so as to decrease the power consumption.The measurement results indicate that this SAR ADC consumes 2.03 mW,corresponding to a figure of merit of 189.17 fj/step at 410 MS/s.

【基金】 Project supported by the National Science Foundation for Young Scientists of China(No.61306029);the National High Technology Research and Development Program of China(No.2013AA014103)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2015年05期
  • 【分类号】TN792
  • 【被引频次】2
  • 【下载频次】64
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