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A low power, low noise figure quadrature demodulator for a 60GHz receiver in 65-nm CMOS technology

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【作者】 Najam Muhammad Amin; 王志功; 李智群; 李芹; 刘扬;

【Author】 Najam Muhammad Amin;Wang Zhigong;Li Zhiqun;Li Qin;Liu Yang;Engineering Research Center of RF-ICs and RF-Systems,Ministry of Education;

【机构】 Engineering Research Center of RF-ICs and RF-Systems,Ministry of Education;

【摘要】 This paper presents tne design of a low power(LP) and a low noise figure(NF) quadrature demodulator with an on-chip frequency divider for quadrature local oscillator(LO) signal generation.The transconductance stage of the mixer is implemented by an AC-coupled self-bias current reuse topology.On-chip series inductors are employed at the gate terminals of the differential input transconductance stage to improve the voltage gain by enhancing the effective transconductance.The chip is implemented in 65-nm LP CMOS technology.The demodulator is designed for an input radio frequency(RF) band ranging from 10.25 to 13.75 GHz.A fixed LO frequency of 12 GHz down-converts the RF band to an intermediate frequency(IF) band ranging from DC to 1.75 GHz.From10 MHz to 1.75 GHz the demodulator achieves a voltage conversion gain(VCG) ranging from 14.2 to 13.2 dB,and a minimum single-sideband NF(SSB-NF) of 9 dB.The measured third-order input intercept point(IIP3) is—3.3 dBm for a two-tone test frequency spacing of 1 MHz.The mixer alone draws a current of only 2.5 mA,whereas the complete demodulator draws a current of 7.18 mA from a 1.2 V supply.The measurement results for a frequency divider,which was fabricated individually,prior to being integrated with the quadrature demodulator,in 65-nm LP CMOS technology,are also presented in this paper.

【Abstract】 This paper presents tne design of a low power(LP) and a low noise figure(NF) quadrature demodulator with an on-chip frequency divider for quadrature local oscillator(LO) signal generation.The transconductance stage of the mixer is implemented by an AC-coupled self-bias current reuse topology.On-chip series inductors are employed at the gate terminals of the differential input transconductance stage to improve the voltage gain by enhancing the effective transconductance.The chip is implemented in 65-nm LP CMOS technology.The demodulator is designed for an input radio frequency(RF) band ranging from 10.25 to 13.75 GHz.A fixed LO frequency of 12 GHz down-converts the RF band to an intermediate frequency(IF) band ranging from DC to 1.75 GHz.From10 MHz to 1.75 GHz the demodulator achieves a voltage conversion gain(VCG) ranging from 14.2 to 13.2 dB,and a minimum single-sideband NF(SSB-NF) of 9 dB.The measured third-order input intercept point(IIP3) is—3.3 dBm for a two-tone test frequency spacing of 1 MHz.The mixer alone draws a current of only 2.5 mA,whereas the complete demodulator draws a current of 7.18 mA from a 1.2 V supply.The measurement results for a frequency divider,which was fabricated individually,prior to being integrated with the quadrature demodulator,in 65-nm LP CMOS technology,are also presented in this paper.

【基金】 supported by the National High Technology Research and Development Program of China(No.2011AA010200)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2015年04期
  • 【分类号】TN858
  • 【被引频次】3
  • 【下载频次】50
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