【摘要】 基于标准的Si C衬底Al GaN/GaN高电子迁移率晶体管(HEMT)工艺研制了毫米波段单片微波集成电路(MMIC)芯片。首先采用插入隔离层的方式得到复合沟道AlxGa1-xN/Al N/AlyGa1-yN/GaN HEMT结构。以EEHEMT模型作为粗糙模型,采用神经空间路线图的方法建立了人工神经网络模型,更好地表征了器件特性,提高了模型在毫米波下的精度。基于器件模型,进行了毫米波MMIC的设计,运用网络综合设计出简洁的电路拓扑和最优的宽带性能。芯片工艺采用0.2μm介质栅场板结构提高器件的微波性能。研制的2级功率MMIC在27~30 GHz频段,工作电压25 V时,输出功率大于2.6 W,功率附加效率大于15%,功率增益大于9 d B。更多还原

【Abstract】 Based on the Si C substrate Al GaN / GaN standard high electron mobility transistor( HEMT) process,the millimeter wave band monolithic microwave integrated circuit( MMIC) chip was developed. By inserting the isolation layer,the AlxGa1- xN / Al N / AlyGa1- yN / GaN composite channel HEMT structure was obtained. With the EEHEMT model as the model of rough set,the artificial neural network( ANN) model was established using neural space map, which the device properties were characterzed better and the model accuracy was improved. Based on the device model,the millimeter wave MMIC was designed,the simple circuit topology and optimal wide band performance were obtained using the network synthesis method. 0. 2 μm dielectric gate field plate structure was used to improve the performance of the microwave devices. A two stage power MMIC was fabricated based on standard process. The test results show the output power of more than 2. 6 W,power addition efficiency of more than 15% and the power gain of more than 9 d B with the frequency between 27 and 30 GHz at 25 V supply voltage.更多还原