【摘要】 采用反应射频磁控溅射法制备MgO/Au复合薄膜,并对使用Mg靶和Au靶共溅射、分步溅射方式以及在不同的衬底温度和Ar/O2气体流量比下制备的样品进行X射线光电子能谱、X射线衍射和扫描电子显微镜分析,研究了主要工艺参数对复合薄膜表面成分和形貌的影响。结果表明,采用共溅射方式制备的复合薄膜中Au元素的含量偏高,薄膜表面有团聚生长的Au晶粒,而采用分步溅射法可以使复合薄膜中Au元素的摩尔百分比下降到7.30%。采用分步溅射制备复合薄膜时,较高的衬底温度有助于MgO晶粒的生长,当衬底温度为500℃,通入Ar气和O2气的流量分别为25和5 mL/min时,MgO晶粒尺寸达到了30~40 nm;MgO薄膜主要呈现出了(111)、(200)和(220)三种结晶取向,较高的Ar/O2气体流量比有利于(200)晶向的形成,而较低的Ar/O2气体流量比有利于(220)晶向的形成。更多还原

【Abstract】 The MgO /Au composite thin films were synthesized by reactive RF magnetron sputtering on n-type Si( 100) substrate. The influence of the growth conditions on the microstructures of the MgO /Au films was evaluated. The MgO /Au films were characterized with X-ray diffraction,X-ray photoelectron spectroscopy,and scanning electron microscopy. The results show that the growth conditions,particularly the substrate temperature,ratio of Ar /O2 gas flow rates,and sputtering modes( co-sputtering and step-by-step sputtering),have a major impact on the MgO /Au film growth. For example,co-sputtering mode resulted in formation of Au grains on the MgO /Au surfaces because of Au fast deposition rate,but step-by-step sputtering mode reduced the Au content to a mole ratio of 7. 30%.Besides,high substrate temperature promoted MgO grain growth. Deposited in a step-by-step sputtering mode at a substrate temperature of 500℃ and a ratio of Ar /O2 gas flow rate of 5. 0,the MgO grains with a size about 30 ~ 40 nm formed. Depending on the ratio of Ar /O2 flow rate,three preferred growth orientations:( 111),( 200),and( 220),were observed.更多还原