The single event effects of 512 × 512 CMOS active pixel image sensors fabricated by Key Laboratory of Infrared-materials and Devices has been study experimentally by using pulsed laser beams. The single event upsets( SEU) and single event latchup( SEL) has been observed when CMOS active pixel image sensors exposure to pulsed laser beam. The validity of measures on chip against to SEL has been verified. At the cases of shift register area where exposure to pulsed laser beam,the SEU and SEL has been observed ...