Mn overlayers on PbTe(111): Substitutional adsorption and interface formation

【摘要】 The formation of the Mn/Pb Te(111) interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a(√3 ×√3)R30?-Pb0.67Mn0.33 Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/Pb Te(111) interface. The valence band maximum associated with the Pb0.67Mn0.33 Te layer is located at 1.27 e V below the Fermi level, and a schematic electronic structure of the Mn/Pb Te(111)interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 e V,in comparison with 4.35 e V for the Pb-covered substituted substrate and 3.95 e V for the pristine Pb Te(111) surface.更多还原

【Abstract】 The formation of the Mn/Pb Te(111) interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a(√3 ×√3)R30?-Pb0.67Mn0.33 Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/Pb Te(111) interface. The valence band maximum associated with the Pb0.67Mn0.33 Te layer is located at 1.27 e V below the Fermi level, and a schematic electronic structure of the Mn/Pb Te(111)interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 e V,in comparison with 4.35 e V for the Pb-covered substituted substrate and 3.95 e V for the pristine Pb Te(111) surface.更多还原