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Moir patterns and step edges on few-layer graphene grown on nickel films

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【作者】 柯芬尹秀丽佟鼐林陈昉刘楠赵汝光付磊刘忠范胡宗海

【Author】 Ke Fen;Yin Xiu-Li;Tong Nai;Lin Chen-Fang;Liu Nan;Zhao Ru-Guang;Fu Lei;Liu Zhong-Fan;Hu Zong-Hai;State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University;Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences,State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering,Academy for Advanced Interdisciplinary Studies, Peking University;Collaborative Innovation Center for Quantum Matter;

【机构】 State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking UniversityCenter for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences,State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering,Academy for Advanced Interdisciplinary Studies, Peking UniversityCollaborative Innovation Center for Quantum Matter

【摘要】 Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir′e patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir′e patterns while both sublattices are seen in regions with moir′e pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.

【Abstract】 Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir′e patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir′e patterns while both sublattices are seen in regions with moir′e pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.

【基金】 supported by the National Basic Research Program of China(Grant No.2012CB921300);the National Natural Science Foundation of China(Grant Nos.11074005 and 91021007);the Chinese Ministry of Education
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2014年11期
  • 【分类号】O471
  • 【下载频次】38
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