High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method(TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×1014cm-2at room temperature.The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall ...
【英文摘要】
High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method(TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×1014cm-2at room temperature.The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall ...
【基金】
Project supported by the National Natural Science Foundation of China(Grant Nos.61204098 and 61371046)
【更新日期】
2014-10-24
【分类号】
O482
【正文快照】
1.Introduction Group III nitrides,such as GaN,AlN,and InN,have at-tracted considerable attention due to their applications in high-power electronic and optoelectronic devices.[1–3]The wurtzite(WZ)GaN-based structure grown along the c axis is foundto have
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