Anomalous Hall effect in perpendicular CoFeB thin films

【摘要】 Our recent research achievements in the perpendicular magnetic anisotropy(PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film.Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.更多还原

【Abstract】 Our recent research achievements in the perpendicular magnetic anisotropy(PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film.Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.更多还原