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SnO2/Zn2SnO4复合陶瓷的压敏性质研究

Varistor Properties of Composite SnO2/Zn2SnO4 Ceramics

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【作者】 张运强张华王改民

【Author】 ZHANG Yunqiang;ZHANG Hua;WANG Gaimin;Department of Physics,ZHengZHou University of Light Industry;Zhengzhou Early Childhood Teacher College;College of material Science and Engineering,Henan University of Technology;

【机构】 郑州轻工业学院物理系郑州幼儿师范高等专科学校河南工业大学材料学院

【摘要】 采用固相反应法制备了Zn2SnO4粉体,通过传统陶瓷制备工艺获得了致密的SnO2/Zn2SnO4复合陶瓷,研究了不同SnO2、Zn2SnO4复合比例对陶瓷压敏性质的影响。结果表明,当Zn2SnO4的比例为15%时,该复合陶瓷的非线性系数和压敏电压分别达到最大值3.4和最小值17V/mm。另外,随着Zn2SnO4含量的变化,样品的压敏电压、介电常数分别与晶粒尺寸的变化规律一致和相反,这表明,晶粒大小是影响样品介电性质的重要因素。进一步研究发现,样品的晶界势垒高度仅为0.5ev左右,这可能是SnO2/Zn2SnO4复合陶瓷材料具有低压压敏性质的重要原因。

【Abstract】 Zn 2 SnO 4 powders were synthesized by solid state reaction and densified composite SnO 2 /Zn 2 SnO 4 ceramics were obtained using traditional ceramic technology. The effect of different proportion of Zn 2 SnO 4 to SnO 2 on the varistor properties was investigated and, the results show that the nonlinear coefficient and breakdown electrical field exhibit maximum 3.4 and minimum 17 V/mm, respectively when the amount of Zn 2 SnO 4 is 15%. In addition, with the increase of Zn 2 SnO 4 content, the respective consistent and reverse variation for breakdown electrical field and dielectric constant with grain size suggests that the grain size is important to dielectric properties. Further study indicates that the barrier height, as low as about 0.5 eV, was responsible for the composite ceramics to exhibiting low breakdown electrical field.

  • 【分类号】TQ174
  • 【下载频次】119
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