The trace boron in solar grade silicon(SOG-Si)was determined by inductively coupled plasma atomic emission spectrometry(ICP-AES).The silicon sample was dissolved in mixed solution of nitric acid and hydrofluoric acid under heating in PFA container at about 110 ℃,and 0.3mL of mannitol was added to protect boron.Electronic grade silicon(EG-Si)was dissolved by reagent of metal oxide semiconductor(MOS)level in class 1000 clean room,so the boron in sample blank was less than1μg/L and the silicon matrix effect ca...
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