【摘要】 设计了表面微机械加工的高长宽比矩形薄膜压力传感器芯片,采用由低压化学气相沉积法(LPCVD)制备的低应力氮化硅(LS SiN)薄膜作为压力传感器芯片的核心结构层,多晶硅薄膜淀积在LS SiN薄膜上,通过结构和位置的优化设计,干法腐蚀制作形成力敏电阻条。制作了压力量程从60 kPa到1 MPa的传感器芯片。试验测试了量程60 kPa压力传感器的长期稳定性,结果表明在室温环境下时,压力传感器显示了较稳定的长时输出,且用LPCVD低温二氧化硅密封的真空参考压力腔没有泄漏问题出现。该超小型传感器制造成本低,具有广泛应用的前景。更多还原

【Abstract】 Surface micromachined pressure sensor chip with long and narrow rectangular film was designed. Low stress silicon nitride( LS SiN) diaphragm,manufactured by mean of LPCVD( low pressure chemical vapor deposition) was used as the core elements in pressure sensor chip. The polycrystalline silicon,deposited on the LS SiN film,was formed piezoresistive resistors by dry etching. Optimized designs,including orientation,length and position of the piezoresistive resistors have been analyzed. The pressure sensors ranging from 60 kPa to 700 kPa have been fabricated. For range 60 kPa pressure sensor,the long-term stability has been measured. It shows the pressure sensor has stable output voltage for long time at a room temperature,and there is no leakage with the vacuum reference cavity sealed by low temperature silicon oxide( LTO) which was manufactured by mean of LPCVD. The micro sensor has a low cost approach,and also has a wide application prospect.更多还原