【摘要】 以SnCl4为锡源,Gd3+为掺杂离子,采用水热法制备出不同掺杂浓度的SnO2纳米晶.运用XRD、TEM、FT-IR以及充放电测试等手段对其结构、形貌、电化学性能进行了表征.结果表明所制备样品为四方晶系金红石型SnO2,Gd3+以替位方式掺入SnO2纳米晶中.当名义Gd3+掺杂浓度达到15%时,SnO2纳米颗粒转变为纳米棒.电化学性能表征发现SnO2纳米棒的首次充放电容量、循环稳定性以及库伦效率都要高于纳米颗粒,并且经过50次循环后SnO2纳米棒的比容量仍保持有370mAh/g.研究结果表明,由于掺杂的作用,调节了材料的形貌与尺寸,改善了SnO2纳米晶的电化学性能.更多还原

【Abstract】 Doped SnO2nanocrystals were prepared via a hydrothermal method using tin tetrachloride as tin precursor,Gd3+ions as doped ions.The XRD,TEM,FT-IR spectra results indicate that the as-synthesized samples are tetragonal rutile SnO2and Gd3+ions exist as the formation of substituting Sn4+ion.Doped SnO2nanocrystals are converted to nanorods from quasi-spherical nanoparticles when the Gd3+doping concentrations is beyond 15%mol.The electrochemical properties of as-synthesized samples show that the initial discharge and charge capacities,cycle performance and coulombic efficiency of Gd3+doped SnO2nanorods are better than those of SnO2nanoparticles.Moreover,Gd3+doped SnO2nanorods show a reversible capacity of 370mAh/g after 50cycles.The results demonstrate as Gd3+ions are introduced,the shape and size of SnO2nanocystals can be changed and the electrochemical property be improved.更多还原