【摘要】 通过交变电场下的紫外光响应测试,观察到ZnO基薄膜在254 nm紫外光激发下的慢响应现象,并测量了响应时间常数。为提高ZnO基薄膜紫外探测器的性能,采用磁控溅射法,制备了纯ZnO薄膜和掺Al浓度为10 at.%(原子比例)的ZnO薄膜紫外探测器,测量了样品的频率特性曲线。结果表明,Al掺杂能有效地抑制ZnO薄膜的慢响应,实现探测器对紫外光的响应时间常数τ<25μs的快速响应。更多还原

【Abstract】 The response test to ultraviolet light is performed under alternating electric field. The slow response phenomenon of ZnO thin film is observed under the excitation by 254 nm ultraviolet light. And the response time constant is measured. The pure ZnO thin film and 10 at.%(atomic ratio) Al doping ZnO thin film ultraviolet detectors are prepared by using a magnetron sputtering method, in order to improve the ZnO thin film performance of UV detector. The frequency characteristic curves of the samples are tested. The results indicate that the Al doping technology can effectively restrain the slow response of the ZnO thin films, and can realize quick response of the detector to ultraviolet light with the response time constant τ <25 μs.更多还原