【摘要】 实现了一种采用微波开关(PIN)二极管设计的低插损、高隔离度的W波段单刀双掷开关(SPDT)。电路采用了改进的Y型结和梳状线高通滤波器形式的鳍线结构,有效提高了端口隔离度,降低了插入损耗。仿真结果显示,导通端口在88 GHz~99 GHz内的插入损耗小于0.7 dB,断开端口隔离度大于58 dB。测试结果显示,在频段90 GHz~95 GHz内,输入端口与输出端口1之间的插入损耗低于3.7 dB、隔离度高于33 dB;输入端口与输出端口2之间的隔离度高于33 dB、插入损耗低于3.8 dB。更多还原

【Abstract】 A W-band Single Pole Double Throw(SPDT) switch with low insertion loss and high isolation that based on Positive Intrinsic Negative(PIN) diodes is presented. The finline structure in the form of comb-line high pass filter and an improved Y-shaped junction are introduced into the circuits to increase the isolation and reduce the insertion loss. Simulated results show that in the range of 88 GHz~ 99 GHz, the insertion loss of the SPDT is less than 0.7 dB, and the isolation is more than 58 dB. In the range of 90 GHz~95 GHz, the insertion loss at output port 1 is less than 3.7 dB, and the isolation is greater than 33 dB, while at output port 2, the insertion loss is less than 3.8 dB and the isolation is greater than 33 dB, which are indicated by experimental results.更多还原