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Insights of Unconventionally Long Exposure Time in Atomic Layer Deposition Al2O3 to Modify SnO2 Photoanode of Dye-Sensitized Solar Cells

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【作者】 董婉王正铎杨丽珍孟涛陈强

【Author】 DONG Wan;WANG Zheng-Duo;YANG Li-Zhen;MENG Tao;CHEN Qiang;Laboratory of Plasma Physics and Materials,Beijing Institute of Graphic Communication;

【机构】 Laboratory of Plasma Physics and Materials,Beijing Institute of Graphic Communication

【摘要】 Porous SnO2 photoanodes coated by alumina through atomic layer deposition technology are reported.It is found that when the dosing time of precursor is extended over 11 s,the 125%maximum increase of cell efficiency is achieved.It is believed that besides the interfacial charge recombination being efficiently suppressed by this ultra-thin coating,the increased absorption of dyes and elimination of the high density of monoenergetic surface states on SnO2 might play a positive role in improving the cell efficiency.The reason is that a long exposure time of precursor can guarantee the 100%coverage of alumina on porous SnO2,which is further explained by a built three-step model.Then we conclude that for a high cell efficiency in porous photoelectrode a long exposure time is indispensable.

【Abstract】 Porous SnO2 photoanodes coated by alumina through atomic layer deposition technology are reported.It is found that when the dosing time of precursor is extended over 11 s,the 125%maximum increase of cell efficiency is achieved.It is believed that besides the interfacial charge recombination being efficiently suppressed by this ultra-thin coating,the increased absorption of dyes and elimination of the high density of monoenergetic surface states on SnO2 might play a positive role in improving the cell efficiency.The reason is that a long exposure time of precursor can guarantee the 100%coverage of alumina on porous SnO2,which is further explained by a built three-step model.Then we conclude that for a high cell efficiency in porous photoelectrode a long exposure time is indispensable.

【基金】 Supported by the National Natural Science Foundation of China under Grant Nos 11175024 and 11375031;the Key Projects in the National Science and Technology Pillar Program during the Twelfth Five-Year Plan Period under Grant No 2011BAD24B01;the Key Project of Beijing Institute of Graphic Communication under Grant No 23190113051
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2014年09期
  • 【分类号】TM914.4
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